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Stacking order dependent second harmonic generation and topological defects in h-BN bilayers.

Cheol-Joo Kim1, Lola Brown, Matt W Graham

  • 1Department of Chemistry and Chemical Biology, ‡Laboratory for Atomic and Solid State Physics, §Kavli Institute at Cornell for Nanoscale Science, and ∥School of Applied and Engineering Physics, Cornell University , Ithaca, NY 14853, United States.

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Controlling stacking in hexagonal boron nitride (h-BN) bilayers reveals distinct optical and topological properties. Specific interlayer symmetries correlate with unique second harmonic generation (SHG) signals and topological defects.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Tuning optical and electronic properties of layered materials relies on controlling stacking structure.
  • Hexagonal boron nitride (h-BN) offers greater structural variation than graphene due to lower monolayer symmetry.
  • Structure-property relationships in h-BN bilayers are underexplored.

Purpose of the Study:

  • Investigate the correlation between interlayer stacking structures and optical/topological properties in h-BN bilayers.
  • Explore how different stacking symmetries influence second harmonic generation (SHG) and topological defects.

Main Methods:

  • Chemically grown h-BN bilayers.
  • Dark-field transmission electron microscopy (DF-TEM) for structural analysis.
  • Optical second harmonic generation (SHG) mapping for optical property assessment.

Main Results:

  • Identified two distinct h-BN bilayer structures with different interlayer symmetries.
  • Observed a strong correlation between interlayer symmetry and SHG intensity; SHG signals appear only in structures with broken inversion symmetry.
  • Detected interlayer topological defects in h-BN bilayers, influenced by local strain, interlayer symmetry, and potential landscapes.

Conclusions:

  • Interlayer stacking symmetry critically dictates optical (SHG) and topological properties in h-BN bilayers.
  • Broken inversion symmetry in h-BN bilayers leads to significantly enhanced SHG signals compared to single layers.
  • Topological defects in h-BN bilayers are linked to strain and influenced by symmetry and interlayer potentials.