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Defect-Engineered Scaling of Lead-Free Ferroelectrics with Ultra-Low-Voltage Switching.

Reza Ghanbari¹, Jiayue Wang^2,3, Harikrishnan Kp⁴

¹Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, United States.

|July 10, 2026

Summary

Defect engineering enables ultrathin, lead-free ferroelectrics for low-power electronics. Modulating alkali deficiency suppresses leakage, allowing robust operation below 10 nanometers and 100 millivolts.

Keywords:

deep trap states nanoscale defect complexes ultra-low-voltage switching ultrathin ferroelectric films

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Published on: May 13, 2020

Area of Science:

Materials Science
Condensed Matter Physics
Electronics Engineering

Background:

Scaling ferroelectric materials to nanometer thicknesses is crucial for low-power, nonvolatile electronics.
Leakage currents become a significant issue in reduced dimensions, limiting device performance.
Alkali-based, lead-free ferroelectrics are environmentally sustainable but face scaling challenges due to volatile alkali constituents causing leakage.

Purpose of the Study:

To overcome the leakage limitations in ultrathin alkali-based, lead-free ferroelectrics.
To demonstrate a method for enabling robust ferroelectric operation at the nanoscale.
To explore defect engineering as a strategy for advancing environmentally benign ferroelectric technologies.

Main Methods:

Thin-film synthesis with precise modulation of alkali deficiency.
Engineering clustered defect complexes to act as deep trap states.
Characterization of ferroelectric properties in sub-10 nm films.

Main Results:

Successfully suppressed leakage currents in ultrathin ferroelectric films.
Achieved robust ferroelectric operation down to the sub-10 nm regime.
Demonstrated operation at voltages below 100 mV through defect engineering.

Conclusions:

Defect engineering can transform intrinsic limitations into advantageous properties for ferroelectric scaling.
This approach enables the development of ultra-low-power, nonvolatile electronic devices using environmentally benign ferroelectrics.
The findings pave the way for advancing next-generation electronic technologies.