High-performance Bi(2)Te(3)-based topological insulator film magnetic field detector

Topological insulators with the nanoscaled metallic surface state (3-5 nm) are actually of typical functional nanostructures. Significant efforts have been devoted to study new families of topological insulators and identifications of topological surface state, as well as fundamental physics issues relating to spin-polarized surface electronic states in the past few years. However, transport investigations that can provide direct experimental evidence for potentially practical applications of topological insulators are limited, and realization of functional devices based on topological insulators is still under exploration. Here, using the Sn-doping Bi2Te3 polycrystalline topological insulator films, we fabricated high-performance current-controlled magnetic field detectors. When a parallel magnetic field is applied, the as-fabricated device exhibits a stable and reproducible magneto-resistance (MR) switching behavior, and the corresponding MR ratio can be modulated by the applied current. Even under such a low magnetic field (0.5 kG), the device still shows a distinguishable MR switching performance, suggesting that topological insulator devices are very sensitive to external stimulation and potentially applicable to weak magnetic field detection.