Related Experiment Video
Updated: May 6, 2026

05:57
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
9.4K
Optical diode action from axially asymmetric nonlinearity in an all-carbon solid-state device
Benoy Anand1, Ramakrishna Podila, Kiran Lingam
1Department of Physics, Sri Sathya Sai Institute of Higher Learning , Prashanti Nilayam, Andhra Pradesh, India 515134.
Nano Letters
|November 15, 2013
Summary
Researchers developed the first all-carbon solid-state optical diode using graphene and C60. This breakthrough enables miniaturized photonic and electronic devices with tunable nonreciprocity.
Area of Science:
- Materials Science
- Nanotechnology
- Photonics
Background:
- Nanostructured carbons offer potential alternatives to silicon for device miniaturization.
- Development of solid-state optical diodes is crucial for advanced photonic and electronic applications.
Purpose of the Study:
- To experimentally realize the first all-carbon solid-state optical diode.
- To investigate its performance characteristics, including polarization independence and tunability.
Main Methods:
- Utilizing a tandem arrangement of a saturable absorber (graphene) and a reverse saturable absorber (C60).
- Investigating axially asymmetric nonlinear absorption for diode functionality.
- Tuning the nonreciprocity factor by adjusting graphene layers and C60 concentration/thickness.
Main Results:
- Successful demonstration of an all-carbon solid-state optical diode.
- Achieved polarization-independent operation without phase-matching constraints.
- Demonstrated tunability of the nonreciprocity factor.
Conclusions:
- The developed graphene/C60 optical diode is ultracompact, versatile, and possesses inherent large bandwidth, chemical, and thermal stability.
- This technology is suitable for cost-effective, large-scale integration with existing fabrication methods.
- Paves the way for miniaturized photonic and electronic devices.
Related Concept Videos
Non-ohmic Devices
1.5K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.5K
Biasing of P-N Junction
2.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.8K
Diode: Reverse bias
2.8K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.8K
Diode: Forward bias
2.7K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
The behavior of a diode in forward bias...
2.7K
Schottky Barrier Diode
1.4K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.4K
The Ideal Diode
2.3K
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
2.3K

