Surface passivation of high density InGaN/GaN nanorods fabricated by reactive ion etching

High density GaN nanorods containing InGaN quantum disks (QD's) were fabricated by inductively coupled plasma reactive ion etching (RIE) with self-assembled nano masks. Optical properties of the QD were severely degraded because of the damage on etched sidewalls during the RIE. However, after surface treatment with (NH4)2S, the QD showed improved photoluminescence. This result suggests that surface damage of GaN nanostructure during the dry etching can be passivated by sulfur atoms.