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Unipolar memristive switching in bulk negative temperature coefficient thermosensitive ceramics
Hongya Wu1, Kunpeng Cai, Ji Zhou
1State key laboratory of new ceramic and fine processing, School of materials science and engineering, Tsinghua University, Beijing, China.
Plos One
|November 21, 2013
Summary
Researchers observed memristive behavior in bulk nickel monoxide (NiO) ceramic, demonstrating a new pathway for creating memristive systems using macroscopic materials.
Area of Science:
- Materials Science
- Solid State Physics
- Electronics
Background:
- Memristive devices are crucial for next-generation electronics, but their realization often relies on nanoscale materials.
- Nickel monoxide (NiO) is a well-known ceramic material with negative temperature coefficient properties.
Purpose of the Study:
- To investigate the memristive phenomenon in macroscopic bulk nickel monoxide (NiO) ceramic.
- To propose a model explaining the observed memristive behavior in NiO.
Main Methods:
- Fabrication of an Ag/NiO/Ag cell using macroscopic bulk NiO ceramic.
- Systematic observation and analysis of current-voltage (I-V) characteristics, including pinched hysteretic loops.
Main Results:
- A distinct memristive phenomenon was successfully observed in the macroscopic bulk NiO material.
- Pulsed hysteretic current-voltage loops, characteristic of memristors, were clearly identified in the Ag/NiO/Ag device.
- A thermistor-based model was proposed and validated to explain the observed memristive mechanism in negative temperature coefficient materials.
Conclusions:
- Macroscopic bulk nickel monoxide (NiO) ceramic exhibits memristive properties.
- The findings suggest a viable route for developing memristive systems using readily available bulk materials, moving beyond nanoscale limitations.
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