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Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

H W Hsu1, H S Huang, C C Lee

  • 1Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT), Taiwan, 106, ROC.

Journal of Nanoscience and Nanotechnology
|November 26, 2013
PubMed

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