Enhanced luminescence properties of InAs-InAsP core-shell nanowires

Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to the mid-infrared spectral region (>2-3 μm) is highly attractive, however, progress has been seriously hampered due to their poor radiative efficiencies arising from nonradiative surface and Auger recombination. Here, we demonstrate up to ~ 10(2) times enhancements of the emission intensities from InAs NWs by growing an InAsP shell to produce core-shell NWs. By systematically varying the thickness and phosphorus (P)-content of the InAsP shell, we demonstrate the ability to further tune the emission energy via large strain-induced peak shifts that already exceed >100 meV at comparatively low fractional P-contents. Increasing the P-content is found to give rise to additional line width broadening due to asymmetric shell growth generated by a unique transition from {110}- to {112}-sidewall growth as confirmed by cross-sectional scanning transmission electron microscopy. The results also elucidate the detrimental effects of plastic strain relaxation on the emission characteristics, particularly in core-shell structures with very high P-content and shell thickness. Overall, our findings highlight that enhanced mid-infrared emission efficiencies with effective carrier confinement and suppression of nonradiative recombination are highly sensitive to the quality of the InAs-InAsP core-shell interface.