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Updated: May 5, 2026
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Opening of a Peierls gap in BaVS3 probed by V L3 edge resonant inelastic x-ray scattering
V Ilakovac1, M Guarise, M Grioni
1Université Pierre et Marie Curie, CNRS UMR 7614, LCP-MR, F-75231 Paris, France. Université de Cergy-Pontoise, F-95031 Cergy-Pontoise, France.
Abstract:
V L3 edge resonant inelastic x-ray scattering measurements performed on high quality BaVS3 single crystals reveal that the intra-t2g dd excitations close to the elastic peak are suppressed below the metal-insulator transition induced by the Peierls instability. The depletion of electronic states close to the Fermi level represents a direct observation of the opening of a charge gap inside the t2g manifold.
