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Published on: October 24, 2017
Furan fused V-shaped organic semiconducting materials with high emission and high mobility
Katsumasa Nakahara1, Chikahiko Mitsui, Toshihiro Okamoto
1The Institute of Scientific and Industrial Research (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Abstract:
We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 cm(2) V(-1) s(-1), thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.
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