Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Temperature Dependent Deformation
Biasing of Metal-Semiconductor Junctions
Imperfections in Crystal Structure: Point, Line and Plane Defects
Debye–Huckel–Onsager Conductance Equation
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Cooling Rate Dependent Ellipsometry Measurements to Determine the Dynamics of Thin Glassy Films
Published on: January 26, 2016
Katharina Vollmayr-Lee1, Annette Zippelius2
1Department of Physics and Astronomy, Bucknell University, Lewisburg, Pennsylvania 17837, USA and Georg-August-Universität Göttingen, Institut für Theoretische Physik, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
We studied silica (SiO2) dynamics below its glass transition temperature, identifying atomic defects. These defects, particularly O-O neighbors, influence structural rearrangements and are temperature-dependent.
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