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Photo-patternable ion gel-gated graphene transistors and inverters on plastic
Seoung-Ki Lee1, S M Humayun Kabir, Bhupendra K Sharma
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
Abstract:
We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (~2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of ~11.5, along with hole and electron mobilities of 852 ± 124 and 452 ± 98 cm(2) V(-1) s(-1), respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability.
