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Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature
Luyang Wang1, Younghun Park, Peng Cui
1National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, South Korea. hyoyoung@skku.edu.
Chemical Communications (Cambridge, England)
|December 17, 2013
Abstract:
We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.
