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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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In situ and non-volatile bandgap tuning of multilayer graphene oxide in an all-solid-state electric double-layer

Takashi Tsuchiya1, Kazuya Terabe, Masakazu Aono

  • 1International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|December 18, 2013
PubMed

Keywords:
bandgap tuningelectric double-layergraphene oxidenanoionics

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