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Updated: May 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Qi Han1, Teng Gao2, Rui Zhang1
11] State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, P. R. China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China.
Disordered graphene demonstrates a strong temperature-dependent resistance, enabling ultra-fast and sensitive hot electron bolometers. This advancement overcomes limitations of pristine graphene for advanced radiation detection applications.
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