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Related Experiment Video

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Orientational Transition in a Liquid Crystal Triggered by the Thermodynamic Growth of Interfacial Wetting Sheets

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Published on: May 15, 2017

Thermal avalanches near a Mott transition.

J C Lashley¹, K Gofryk, B Mihaila

¹Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|December 20, 2013

Summary

We investigated the volume collapse transition in Ce0.9Th0.1, observing avalanche noise consistent with intergranular stresses. This suggests carrier localization at phase interfaces, impacting the itinerant ground state.

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Area of Science:

Condensed Matter Physics
Materials Science
Cerium Alloys

Background:

The isostructural γ-α phase transition in cerium alloys involves significant volume changes.
Understanding the electronic and structural properties during this transition is crucial for materials science.
Previous work predicted carrier localization in elemental cerium.

Purpose of the Study:

To probe the volume collapse transition in Ce0.9Th0.1.
To investigate the relationship between electronic properties and phase transitions.
To analyze the nature of avalanches observed during the transition.

Main Methods:

Hall effect measurements to determine carrier concentration and ground state.
Capacitive dilatometry to measure volume changes.
Electrical resistivity measurements to probe electronic transport.
Noise spectrum analysis to detect avalanches.

Main Results:

A volume collapse of ~15% was observed between the γ and α phases around 100 K.
Hall effect confirmed a 7-fold increase in carrier concentration in the α phase.
Avalanche noise obeying power laws (exponent ~1.5) was detected in the hysteretic region.
Evidence for short electron mean-free pathways and carrier localization at phase interfaces.

Conclusions:

The observed avalanches likely originate from intergranular stresses at phase interfaces.
Hall effect data and critical exponents suggest percolation pathways and carrier localization.
Findings align with theoretical predictions of carrier localization in cerium alloys.