Related Experiment Video
Updated: May 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Quasi-one-dimensional electronic states induced by an extended line defect in graphene: an analytic solution
Xiaoling Lü1, Liwei Jiang, Yisong Zheng
1National Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China.
Abstract:
Analytic solutions of the quasi-one-dimensional (q1D) electron states around an extended line defect in a graphene lattice are derived within the tight-binding model. Then, the electronic properties of this kind of boundary state in graphene are studied in detail. It is found that one subband composed of the even-parity boundary states emerges in the vicinity of the Dirac point. In particular, when the bulk band is gapped, such a one-dimensional subband remains in the bandgap, spanning two inequivalent valleys. In addition, this boundary state subband exhibits nontrivial dispersion, which can carry the valley polarized charge current flowing along the extended line defect. As a result, the line defect behaves like a one-dimensional channel for electronic transport. Moreover, its appearance in graphene or a hexagonal boron nitride sheet provides a promising way to print electric circuits in these two-dimensional materials.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Related Concept Videos
Debye–Huckel–Onsager Conductance Equation
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Point, Line and Plane Defects
The de Broglie Wavelength
Valence Bond Theory
The Electrical Double Layer