Synthesis, characterization, and non-volatile memory device application of an N-substituted heteroacene
Chengyuan Wang1, Jiangxin Wang, Pei-Zhou Li
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081.
Abstract:
N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
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