A semiconductor opening switch based generator with pulse repetitive frequency of 4 MHz
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Updated: May 4, 2026

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Published on: June 3, 2015
Gang Wang1, Jiancang Su1, Zhenjie Ding1
1Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, P. O. Box 69 Branch 13, Xi'an 710024, China.
Abstract:
A MHz repetitive and nanosecond pulsed power generator based on the semiconductor opening switch (SOS) is developed, in which the pulse compression unit utilizes several Radio Frequency (RF) MOSFETs and a saturable Linear Transformer Driver (LTD). The RF MOSFETs are employed to obtain the forward pumping current pulses with the duration of tens of nanoseconds; the saturable LTD is used to raise the pulse voltage, to compress the pulse width and to pump SOS reversely. The SOS assembly cuts off the reverse current in a few nanoseconds, leading to a narrow output pulse on an external load. The experimental results show that the amplitude of the output pulse on a 106 Ω resistive load is about 3.8 kV and the width is 2 ns. Due to the repetitive ability of the RF MOSFETs, the generator can operate at a repetitive frequency of higher than 4 MHz in burst mode.
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