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Updated: May 4, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on
L H de Lima1, H Y Cun2, A Hemmi2
1Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859, Campinas, SP, Brazil.
Abstract:
The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily controlled by the temperature of ionizer. Scanning Tunneling Microscopy measurements confirm ion implantation.
