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Updated: May 4, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
Simone Mazzucato1, Henri Lehec, Helene Carrère
1LPCNO, INSA-UPS-CNRS, Université de Toulouse, 135 Avenue de Rangueil, Toulouse F-31400, France. mazzucat@insa-toulouse.fr.
Abstract:
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.
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