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Updated: May 3, 2026
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface
Seung-Jun Yoo1, Jung-Hung Chang2, Jeong-Hwan Lee1
1WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea.
Abstract:
A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.
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