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Updated: Sep 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

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Revisiting the Schottky-Mott Relation for Metal/Transition Metal Dichalcogenide Interfaces: The Role of Interface

Chih-Piao Chuu1, Shu-Jui Chang1, Yu-Miin Sheu2

  • 1Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu30091, Taiwan.

ACS Nano
|August 31, 2026
PubMed

Keywords:
Fermi level pinningLennard-Jones potentialSchottky barriercontact engineeringinterface dipoletransition metal dichalcogenidework function

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