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Published on: March 24, 2019
Size dependence of domain pattern transfer in multiferroic heterostructures
Kévin J A Franke1, Diego López González1, Sampo J Hämäläinen1
1NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto, Finland.
Magnetoelectric coupling in multiferroic heterostructures allows ferroelectric domain imprinting in ferromagnetic films. Competing energies limit pattern transfer below a critical size, with magnetic field rotation causing distinct anisotropy transitions, confirmed by CoFeB/BaTiO3 experiments.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Multiferroic heterostructures exhibit magnetoelectric coupling, influencing magnetic properties.
- Ferroelectric domains can be imprinted onto ferromagnetic films via magnetoelectric effects.
- Internal magnetic interactions (exchange, magnetostatic) resist domain pattern formation.
Purpose of the Study:
- Investigate the limitations of ferroelectric domain imprinting in ferromagnetic films.
- Analyze the role of competing energies in domain pattern transfer.
- Explore the impact of magnetic field rotation on magnetic anisotropy.
Main Methods:
- Micromagnetic simulations were employed to model the system.
- A one-dimensional model was developed to analyze energy competition.
- Experimental validation was performed on Cobalt-Iron-Boron/Barium Titanate (CoFeB/BaTiO3) heterostructures.
Main Results:
- A critical domain size was identified, below which domain pattern transfer breaks down due to competing energies.
- Abrupt transitions between two magnetic anisotropy scaling regimes were observed upon magnetic field rotation.
- Experimental results on CoFeB/BaTiO3 heterostructures confirmed the theoretical predictions.
Conclusions:
- The study elucidates the fundamental mechanisms limiting magnetoelectric domain imprinting.
- Understanding these energy competitions is crucial for designing advanced multiferroic devices.
- The observed magnetic anisotropy transitions offer new avenues for magnetic memory and spintronic applications.
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