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Updated: May 3, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Giant up-conversion efficiency of InGaAs quantum dots in a planar microcavity
Qinfeng Xu1, Carlo Piermarocchi2, Yuriy V Pershin3
11] National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China [2] Department of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China.
We enhanced the up-converted photoluminescence (PL) of Indium Gallium Arsenide (InGaAs) quantum dots (QDs) within a microcavity. This breakthrough achieved giant efficiency, comparable to down-converted PL, by modifying light-matter interactions.
Area of Science:
- Semiconductor Nanostructures
- Quantum Optics
- Materials Science
Background:
- Self-assembled Indium Gallium Arsenide (InGaAs) quantum dots (QDs) are crucial for optoelectronic devices.
- Microcavities can modify the optical properties of embedded quantum emitters.
- Understanding photoluminescence (PL) phenomena in quantum dots is essential for device applications.
Purpose of the Study:
- To investigate the photoluminescence (PL) properties of InGaAs quantum dots (QDs) coupled to a planar microcavity.
- To study the temperature-dependent behavior of both down- and up-converted PL.
- To explore methods for enhancing up-converted PL efficiency in QD systems.
Main Methods:
- Fabrication of InGaAs QDs within a planar microcavity supporting two vertical cavity modes.
- Excitation of QDs coupled to a cavity mode via two propagating cavity modes.
- Measurement and analysis of down- and up-converted photoluminescence (PL) spectra as a function of temperature.
Main Results:
- Observed continuous increase in up-converted PL intensity with rising temperature, reaching ~120 K.
- Achieved a giant enhancement in up-converted PL efficiency, approximately 2 orders of magnitude higher than in structures without a cavity.
- Up-converted PL intensity became comparable to down-converted PL intensity at ~120 K.
Conclusions:
- The microcavity significantly enhances the up-converted PL of InGaAs QDs.
- Modified spontaneous emission properties within the microcavity, coupled with phonon interactions, are responsible for the enhanced up-conversion.
- This work demonstrates a promising approach for efficient up-conversion in quantum dot systems.
