Related Experiment Video
Updated: May 3, 2026

10:54
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
14.4K
Spoof plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser: a feasibility study
Optics Express
|February 12, 2014
Summary
We demonstrate a compact Terahertz Gallium Nitride/Aluminum Gallium Nitride (GaN/AlGaN) quantum cascade laser (QCL) using spoof surface plasmon (SSP) waveguides for room-temperature operation. This design achieves threshold current density around 6 kA/cm2, leveraging GaN
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Quantum Electronics
Background:
- Quantum cascade lasers (QCLs) are crucial for generating coherent terahertz (THz) radiation.
- Achieving room-temperature operation in THz QCLs remains a significant challenge due to various loss mechanisms.
Purpose of the Study:
- To investigate the feasibility of a compact THz GaN/AlGaN quantum cascade laser (QCL).
- To explore the use of spoof surface plasmon (SSP) waveguides for room-temperature operation.
- To leverage the unique properties of GaN for enhanced laser performance.
Main Methods:
- Theoretical analysis and simulation of a five-period GaN/AlGaN heterostructure.
- Design of a spoof surface plasmon (SSP) waveguide for optical confinement.
- Modeling of laser state lifetimes considering phonon scattering mechanisms in GaN.
Main Results:
- A novel THz GaN/AlGaN QCL design with only five periods was proposed.
- The spoof surface plasmon (SSP) waveguide demonstrated sufficiently low optical loss.
- The QCL is predicted to reach threshold at an injection current density of approximately 6 kA/cm2 at room temperature.
Conclusions:
- The proposed THz GaN/AlGaN QCL design utilizing SSP waveguides is feasible for room-temperature operation.
- The inherent properties of GaN, such as large optical phonon energy, are beneficial for QCL performance.
- This work paves the way for compact and efficient room-temperature THz sources based on III-nitride materials.

