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Distributed-feedback quantum cascade laser emitting at 3.2 μm.

Johanna M Wolf, Alfredo Bismuto, Mattias Beck

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    We developed Gallium Indium Arsenide/Aluminum Arsenide/Aluminum Indium Arsenide (GaInAs/AlAs/AlInAs) quantum cascade lasers for mid-infrared emission. These lasers achieve single-mode output and are suitable for industrial production.

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    Area of Science:

    • Quantum electronics
    • Semiconductor lasers
    • Mid-infrared optoelectronics

    Background:

    • Quantum cascade lasers (QCLs) are crucial for mid-infrared (MIR) applications.
    • Achieving stable single-mode emission in QCLs is essential for precise wavelength control.
    • Industrial scalability of fabrication processes is key for widespread adoption.

    Purpose of the Study:

    • To present GaInAs/AlAs/AlInAs quantum cascade lasers emitting in the 3.2–3.4 μm range.
    • To demonstrate single-mode emission using buried distributed-feedback gratings.
    • To assess the industrial feasibility of the fabrication technique.

    Main Methods:

    • Fabrication of buried distributed-feedback gratings using deep-UV contact lithography.
    • Integration of GaInAs/AlAs/AlInAs heterostructures for laser active regions.
    • Characterization of laser performance, including emission wavelength, power, and tunability.

    Main Results:

    • Achieved single-mode emission from 3.2 to 3.4 μm.
    • Demonstrated devices with single-mode emission as low as 3.19 μm.
    • Obtained peak output power up to 250 mW at -20 °C.
    • Observed a tuning range of 11 cm⁻¹ by varying temperature from -30 °C to 20 °C.

    Conclusions:

    • The developed deep-UV lithography technique is suitable for industrial production of QCLs.
    • GaInAs/AlAs/AlInAs QCLs with buried gratings offer robust single-mode emission in the target MIR range.
    • The devices exhibit promising performance characteristics for various applications requiring tunable MIR sources.