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Updated: May 2, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Recrystallized arrays of bismuth nanowires with trigonal orientation
Steven J Limmer1, W Graham Yelton, Kristopher J Erickson
1Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
Abstract:
We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.
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