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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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Three-terminal nanoelectromechanical field effect transistor with abrupt subthreshold slope
Ji-Hun Kim1, Zack C Y Chen, Soonshin Kwon
1Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California, San Diego , 9500 Gilman Dr., La Jolla, California 92093-0407, United States.
Nano Letters
|February 27, 2014
Summary
This study demonstrates the first nanoelectromechanical field effect transistor (NEMFET) operating at room temperature with excellent subthreshold slope. This breakthrough offers potential for ultrahigh-frequency, low-power computing systems.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Conventional transistors face limitations in power consumption and speed.
- Nanoelectromechanical systems (NEMS) offer potential for novel electronic devices.
Purpose of the Study:
- To experimentally demonstrate a three-terminal nanoelectromechanical field effect transistor (NEMFET).
- To evaluate the performance characteristics of the NEMFET for potential low-power computing applications.
Main Methods:
- Fabrication of a three-terminal NEMFET utilizing a suspended nanowire channel.
- Modulation of drain current via an insulated gate electrode.
- Room-temperature electrical characterization and radio-frequency measurements.
Main Results:
- Achieved a subthreshold slope as low as 6 mV/dec at room temperature.
- Demonstrated a switching voltage window under 2 V.
- Confirmed reliable on/off switching for up to 130 cycles and operation at 125 MHz.
Conclusions:
- The NEMFET design eliminates the need for a conducting moving electrode, simplifying fabrication.
- The device shows promise for scalable, ultrahigh-frequency operation below 1 V.
- NEMFETs represent a viable pathway towards next-generation low-power computing systems.
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