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Updated: May 2, 2026

Preparing an Isotopically Pure 229Th Ion Beam for Studies of 229mTh
Published on: May 3, 2019
Development of the ion source for cluster implantation
T V Kulevoy1, D N Seleznev1, A V Kozlov1
1Institute for Theoretical and Experimental Physics, Moscow, Russia.
Abstract:
Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.
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