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Gas feeding molecular phosphorous ion source for semiconductor implanters.

V I Gushenets1, E M Oks1, A S Bugaev1

  • 1High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.

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This study explores using phosphine gas to create phosphorus ion beams for semiconductor doping. Researchers investigated how phosphine decomposition and discharge parameters affect ion beam composition.

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Area of Science:

  • Materials Science
  • Chemical Engineering
  • Semiconductor Physics

Background:

  • Phosphorus is a key dopant in semiconductor manufacturing.
  • Red phosphorus is a common, stable source for phosphorus vapor (P4).
  • Existing methods utilize red phosphorus for polyatomic molecular ion beams.

Purpose of the Study:

  • To investigate phosphine as an alternative phosphorus vapor source.
  • To generate polyatomic phosphorus ion beams using phosphine.
  • To analyze the impact of process parameters on ion beam characteristics.

Main Methods:

  • Utilizing phosphine (PH3) as a precursor gas.
  • Employing a specialized dissociator to decompose phosphine at ~700°C.
  • Heating phosphine to produce molecular hydrogen and phosphorus (P4).
  • Directing reaction products to a discharge chamber for ion beam generation.

Main Results:

  • Demonstrated successful generation of phosphorus ion beams from phosphine.
  • Presented experimental data on the influence of discharge parameters.
  • Showcased the effect of dissociator heater temperature on ion beam mass-charge state.

Conclusions:

  • Phosphine is a viable alternative source for generating phosphorus ion beams.
  • Process parameters significantly influence the resulting ion beam composition.
  • This method offers a novel approach for semiconductor doping applications.