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Updated: May 2, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Defect-controlled electronic properties in AZn₂Sb₂ Zintl phases
Gregory S Pomrehn1, Alex Zevalkink, Wolfgang G Zeier
1Materials Science, California Institute of Technology, 1200 East California Blvd, Pasadena, CA 91125 (USA) http://thermoelectrics.caltech.edu.
Abstract:
Experimentally, AZn2Sb2 samples (A=Ca, Sr, Eu, Yb) are found to have large charge carrier concentrations that increase with increasing electronegativity of A. Using density functional theory (DFT) calculations, we show that this trend can be explained by stable cation vacancies and the corresponding finite phase width in A(1-x)Zn2Sb2 compounds.
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