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Lithography and doping in strained Si towards atomically precise device fabrication.

W C T Lee1, S R McKibbin, D L Thompson

  • 1Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.

Nanotechnology
|March 18, 2014
PubMed
Summary
This summary is machine-generated.

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This study demonstrates atomic-scale silicon device fabrication using hydrogen lithography on strained silicon-on-insulator substrates. This method enables the creation of electrically active phosphorus-doped silicon with potential for advanced nanoelectronic devices.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Introducing strain into silicon devices is crucial for enhancing electronic properties.
  • Atomic-scale fabrication techniques are essential for next-generation electronics.

Purpose of the Study:

  • To investigate hydrogen lithography for creating strained silicon atomic-scale devices.
  • To analyze the electrical properties of phosphorus-doped silicon on strained silicon-on-insulator.

Main Methods:

  • Selective hydrogen desorption from a resist layer using a scanning tunneling microscope tip under ultra-high vacuum.
  • Fabrication of phosphorus delta-doped silicon layers on strained silicon-on-insulator (sSOI) substrates.
  • Characterization of lithographic feature sizes and electrical properties of doped layers.

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Main Results:

  • Achieved lithographic feature sizes down to 1.3 nm by controlling tip-to-sample bias.
  • Obtained high carrier densities (>1.0 × 10^14 cm^-2) and mobilities (~100 cm^2 V^-1 s^-1) in P:Si delta-doped layers despite substrate strain.
  • Demonstrated successful fabrication of electrically active doped silicon on sSOI.

Conclusions:

  • Hydrogen lithography is a viable scanning-probe technique for atomic-scale strained silicon device fabrication.
  • Strain in sSOI substrates does not prevent achieving excellent electrical properties in delta-doped silicon.
  • This approach paves the way for novel strained atomic-scale silicon nanoelectronic devices.