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Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

Deepak Sharma1, Matin Amani, Abhishek Motayed

  • 1Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. National Institute of Standards and Technology, Material Measurement Laboratory, Gaithersburg, MD 20899, USA.

Nanotechnology
|March 20, 2014
PubMed

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