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Updated: May 2, 2026

Picometer-Precision Atomic Position Tracking through Electron Microscopy
Published on: July 3, 2021
Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission
Ryo Ishikawa1, Andrew R Lupini, Scott D Findlay
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Abstract:
Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single atom Ce dopant embedded within wurtzite-type AlN. The method represents a powerful new tool for reconstructing three-dimensional information from a single, two-dimensional image.
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