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Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures
11] State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China [2].
Abstract:
Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.
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