Related Experiment Video
Updated: May 1, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Formation of alternating interfacial layers in Au-12Ge/Ni joints
Shih-kang Lin1, Ming-yueh Tsai2, Ping-chun Tsai2
11] Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan [2] Promotion Center for Global Materials Research, National Cheng Kung University, Tainan 70101, Taiwan [3] Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan.
Abstract:
Au-Ge alloys are promising materials for high-power and high-frequency packaging, and Ni is frequently used as diffusion barriers. This study investigates interfacial reactions in Au-12Ge/Ni joints at 300 °C and 400 °C. For the reactions at 300 °C, typical interfacial morphology was observed and the diffusion path was (Au) + (Ge)/NiGe/Ni5Ge3/Ni. However, an interesting phenomenon--the formation of (Au,Ni,Ge)/NiGe alternating layers - was observed for the reactions at 400 °C. The diffusion path across the interface was liquid/(Au,Ni,Ge)/NiGe/· · ·/(Au,Ni,Ge)/NiGe/Ni2Ge/Ni. The periodic thermodynamic instability at the NiGe/Ni2Ge interface caused the subsequent nucleation of new (Au,Ni,Ge)/NiGe pairs. The thermodynamic foundation and mechanism of formation of the alternating layers are elaborated in this paper.
More Related Videos
07:50Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and...
The Electrical Double Layer
P-N junction