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Intrinsic antiferromagnetic/insulating phase at manganite surfaces and interfaces
S Valencia1, L Peña, Z Konstantinovic
1Helmholtz-Zentrum-Berlin, Albert-Einstein-Str. 15, 12489 Berlin, Germany.
Interfacial effects in lanthanum strontium manganite (LSMO) thin films were studied. An intrinsic antiferromagnetic/insulating phase at the interface, independent of capping layers, explains the "dead layer" phenomenon in magnetic tunneling junctions.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Surface Science
Background:
- Bilayer systems involving La(2/3)Sr(1/3)MnO(3) (LSMO) thin films are crucial for magnetic tunneling junctions.
- Understanding interfacial effects is key to optimizing device performance.
- The 'dead layer' phenomenon in manganite-based devices is not fully understood.
Purpose of the Study:
- Investigate interfacial effects in LSMO bilayer systems with various capping layers.
- Determine the origin of the 'dead layer' observed in manganite-based magnetic tunneling junctions.
- Elucidate the role of interfacial phase separation and structural disruption.
Main Methods:
- Surface-sensitive synchrotron radiation techniques were employed for detailed analysis.
- Transport measurements were conducted to assess electrical properties.
- Comparative studies were performed on capped and uncapped LSMO samples.
Main Results:
- A capping-layer-dependent variation in the Mn oxidation state at the interface was observed.
- An intrinsic antiferromagnetic/insulating phase, approximately two unit cells thick, was detected at the LSMO interface.
- This interfacial phase exists irrespective of the capping material, suggesting an intrinsic phenomenon.
Conclusions:
- The detected interfacial phase likely originates from preferential occupancy of Mn 3d orbitals.
- Structural disruption and broken inversion symmetry at the LSMO interface promote this phase separation.
- This intrinsic interfacial phenomenon is responsible for the depressed magnetotransport properties and the 'dead layer' in manganite-based magnetic tunneling junctions.
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