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Published on: April 12, 2018
Ambipolar MoTe2 transistors and their applications in logic circuits
Yen-Fu Lin1, Yong Xu, Sheng-Tsung Wang
1WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan; Department of Physics, National Chung-Hsing University, Taichung, 40227, Taiwan.
We observed ambipolar charge transport in alpha-molybdenum ditelluride (MoTe2) flakes, showing potential for electronic circuits. This behavior, tunable via gate voltage, arises from Schottky barriers at metal contacts.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional materials like MoTe2 are promising for next-generation electronics.
- Understanding charge transport mechanisms is crucial for device optimization.
- Schottky barriers at metal-semiconductor interfaces significantly impact device performance.
Purpose of the Study:
- To investigate ambipolar charge transport in alpha-molybdenum ditelluride (MoTe2) flakes.
- To analyze the temperature dependence of MoTe2 electrical characteristics.
- To demonstrate the potential of MoTe2 transistors in electronic circuits.
Main Methods:
- Fabrication of MoTe2 field-effect transistors.
- Systematic analysis of temperature-dependent electrical characteristics.
- Electrical characterization under varying back-gate (Vbg) and drain-source (Vds) voltages.
Main Results:
- Demonstrated ambipolar charge transport in MoTe2 flakes.
- Identified Schottky barriers at metal/MoTe2 contacts as the origin of ambipolarity.
- Showcased tunability of Schottky barrier heights and current on/off ratio via Vbg and Vds.
- Successfully fabricated complementary inverters and amplifiers using MoTe2 transistors.
Conclusions:
- Ambipolar MoTe2 transistors exhibit tunable electrical properties.
- MoTe2 is a viable material for fabricating complementary logic circuits.
- These findings highlight the potential of MoTe2 for future digital and analog electronics.
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