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Bioinspired TeSeO/InZnO Optoelectronic Synapse for Broadband UV-Visible-NIR Sensing and Multifunctional Reservoir
Li Zhu1,2, Feng Zhang1, Pengyu Chen1
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications. Nanjing 210023, China.
Nano Letters
|January 16, 2026
Summary
Researchers developed a broadband optoelectronic synaptic transistor using TeSeO/InZnO. This device mimics brain functions for intelligent sensing and computing, achieving high accuracy in object recognition and solving complex equations.
Area of Science:
- Materials Science
- Neuroscience
- Computer Engineering
Background:
- Neuromorphic visual systems integrate optical perception, memory, and computation for advanced intelligent sensing.
- Brain-inspired computing seeks to replicate neural processing for enhanced computational capabilities.
Purpose of the Study:
- To develop a broadband optoelectronic synaptic transistor for next-generation intelligent sensing.
- To explore the device's potential in neuromorphic computing and solving complex dynamical equations.
Main Methods:
- Fabrication of a TeSeO/InZnO heterojunction optoelectronic synaptic transistor.
- Characterization of broadband photoresponse from UV to NIR (360-1550 nm).
- Evaluation of synaptic functionalities (EPSC, PPF) and memory transition under illumination.
Main Results:
- The device demonstrated tunable synaptic functionalities under UV-visible-NIR illumination.
- A reservoir computing framework using the device achieved 93% accuracy in colored object recognition.
- The system effectively solved second-order nonlinear dynamical equations with a low RMSE of 4.19 × 10-4.
Conclusions:
- The TeSeO/InZnO heterojunction transistor provides a material and device foundation for broadband neuromorphic visual perception.
- This work advances brain-inspired computing for high-dimensional dynamic tasks and intelligent sensing.
