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Updated: May 1, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Multilevel nonvolatile flexible organic field-effect transistor memories employing polyimide electrets with different
An-Dih Yu1, Wei-Yao Tung, Yu-Cheng Chiu
1Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Abstract:
The electrical memory characteristics of the n-channel organic field-effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron-accepting ability. The distinct charge-transfer capabilities of these PIs result in varied type of memory behaviors from the write-one-read-many (WORM) to flash type. Finally, a prominent flexible WORM-type transistor memory is demonstrated and shows not only promising write-many-read-many (WMRM) multilevel data storage but also excellent mechanical and retention stability.
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