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Updated: May 1, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Richard Hahnkee Kim1, Hae Jin Kim2, Insung Bae3
11] Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea [2].
Flexible organic memory devices offer new possibilities for wearable electronics. Researchers developed dual-mode ferroelectric organic field-effect transistors with high reliability and mechanical flexibility, even after extreme bending and folding.
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
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