Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures

Area of Science:

• Quantum Information Science
• Materials Science
• Solid State Physics

Background:

• Nitrogen-vacancy (NV) centers in diamond are crucial for quantum applications.
• Controlling the charge state of NV centers is essential for their functionality.
• Current methods for charge state control are often limited.

Purpose of the Study:

• To demonstrate a novel method for the active and reversible control of NV center charge states.
• To utilize an all-diamond nanostructure for manipulating NV charge states.
• To enable remote control of NV charge states.

Main Methods:

• Fabrication of an all-diamond in-plane gate nanostructure.
• Application of voltage to the gate structure to induce band bending.
• Characterization of NV center charge state conversion (NV(-) to NV(0) and dark states).

Main Results:

• Achieved reversible manipulation of the NV center charge state (NV(-) to NV(0) to dark state).
• Demonstrated that applied gate voltage effectively modulates band bending for charge conversion.
• Showcased remote control of NV charge states up to tens of micrometers away.

Conclusions:

• The all-diamond in-plane gate is a viable tool for controlling NV center charge states.
• This technique offers transparent top gating for distant manipulation.
• Enables advanced applications requiring precise NV charge state management.