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Related Concept Videos

Characteristics of Series Resonant Circuit01:24

Characteristics of Series Resonant Circuit

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Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:
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The property of an inductor makes it resist any change in the current passing through it, while the property of a capacitor is to build up the charge across its terminals. Hence, if an inductor and capacitor are connected in series, they have opposite effects on the relative phase between current and voltage. The current through the circuit undergoes forced oscillation at the frequency of the source. The resistance term in an R-L-C circuit acts as a damping term because power is dissipated...
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A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
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Fabrication of Silica Ultra High Quality Factor Microresonators
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Dissipation in ultrahigh quality factor SiN membrane resonators.

S Chakram1, Y S Patil1, L Chang1

  • 1Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA.

Physical Review Letters
|April 15, 2014
PubMed
Summary
This summary is machine-generated.

We achieved ultrahigh mechanical quality factors in silicon nitride (SiN) resonators, setting new records for mesoscopic flexural resonators. Optimizing substrate design is key to reducing energy loss and enabling quantum mechanics in macroscopic systems.

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Nanotechnology

Background:

  • Mesoscopic mechanical resonators are crucial for fundamental physics research and advanced sensing applications.
  • Achieving high mechanical quality factors is essential for minimizing energy dissipation and enhancing device performance.

Purpose of the Study:

  • To investigate the mechanical properties of stoichiometric silicon nitride (SiN) resonators.
  • To identify the dominant dissipation mechanisms limiting resonator performance.
  • To establish a platform for observing quantum behavior in macroscopic mechanical systems.

Main Methods:

  • Utilized a combination of spectroscopic and interferometric imaging techniques.
  • Conducted experiments at room temperature.
  • Analyzed resonator and substrate geometry to understand dissipation.

Main Results:

  • Demonstrated ultrahigh quality factors (Q) of 5×10^7 and a frequency-Q product (f×Q) of 1×10^14 Hz.
  • Reported the largest reported values for mesoscopic flexural resonators to date.
  • Identified radiation loss through the supporting substrate as the primary dissipation mechanism.

Conclusions:

  • Optimized substrate designs can lead to even higher quality factors.
  • The developed SiN resonators provide a promising platform for exploring quantum mechanics in macroscopic systems.