Related Experiment Video
Updated: May 1, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Resistance of outmost shell- and embedded-end contacts of single- and multi-bridged carbon nanotubes
Abstract:
Single-bridged (SB) and multi-bridged (MB) carbon nanotubes (CNTs) were laterally grown between two electrodes capped on a thin nickel film, which functioned as catalysts. SB CNTs with outermost shell-end and embedded-end contacts on the electrodes showed varistor- or metal-like current-voltage (IV) characteristics. The devices were measured with fixed-amplitude AC superimposed on varying bias voltages. The MB CNTs contained both meal- and varistor-like CNTs, with the latter dominating the resistance at a higher bias. The results also imply that contact configuration significantly affects electrical interconnection.
Related Concept Videos
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Resistance
Resistivity
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

