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Updated: May 1, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Carbon nanofiber interconnect RF characteristics improvement with deposited tungsten contacts
Abstract:
Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for high-performance electronic devices and circuits due to their light weight and excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds special promise for applications as on-chip interconnects. Contact resistance at CNF-metal interface is a major factor in limiting the electrical performance of CNF interconnects at all frequencies. In this paper, it is demonstrated that the contact resistance can be minimized and the high-frequency characteristics much enhanced by depositing tungsten on CNF-metal electrode contacts.

