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Schottky-barrier resistive memory with highly uniform switching
Journal of Nanoscience and Nanotechnology
|April 25, 2014
Summary
This study demonstrates forming-free resistive memory using stacked GeO/SrTiO and a Ni electrode. The device achieves low sub-microW power operation with a high on-off ratio, enabling uniform current distributions.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid State Physics
Background:
- Resistive random-access memory (RRAM) offers high density and low power consumption.
- Achieving forming-free switching and uniform current distribution in RRAM remains a challenge.
Purpose of the Study:
- To develop a forming-free RRAM device with low operating power and high uniformity.
- To investigate the role of the Ni electrode and GeO/SrTiO interface in device performance.
Main Methods:
- Fabrication of stacked GeO/SrTiO resistive memory devices with a high-work-function Ni electrode.
- Characterization of electrical switching behavior, including endurance and uniformity.
- Analysis of the Schottky barrier at the Ni/GeO(x) interface and its effect on electron hopping.
Main Results:
- Realization of forming-free switching with an on-off ratio exceeding 1000x.
- Achieved low sub-microW operating power consumption.
- Demonstrated highly uniform current distributions attributed to stabilized electron hopping.
Conclusions:
- The Ni/GeO(x) Schottky barrier and current compliance effectively stabilize electron hopping for uniform switching.
- The developed RRAM technology shows promise for low-power, high-performance memory applications.
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