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Updated: Apr 30, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes
Nuri Yazdani1, Vipin Chawla2, Eve Edwards2
1Nanoscience for Energy Technology and Sustainability, Department of Mechanical and Process Engineering, ETH Zürich, Zürich CH-8092, Switzerland ; Laboratory for Nanoelectronics, Department of Information Technology and Electrical Engineering, ETH Zürich, Zürich CH-8092, Switzerland.
Abstract:
Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.

