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Updated: Apr 30, 2026

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Ferroelastic domain switching dynamics under electrical and mechanical excitations

Peng Gao1, Jason Britson2, Christopher T Nelson3

  • 11] Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA [2].

Nature Communications
|May 3, 2014
PubMed
Summary

Ferroelastic domain walls in ferroelectric films are stabilized by dislocations but can be removed by electric or stress fields. Switching occurs most readily at needle points, offering insights for device engineering.

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