Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide...

Area of Science:

• Materials Science
• Nanotechnology
• Electronics Engineering

Background:

• Laser scribing offers a low-cost, efficient method for reduced graphene oxide (rGO) fabrication and patterning.
• Existing laser-scribed rGO (LSG) components include capacitors, gas sensors, and strain sensors.
• Integrating memory components into LSG systems is crucial for broader applications.

Purpose of the Study:

• To demonstrate, for the first time, a low-cost fabrication of resistive random-access memory (ReRAM) using LSG as the bottom electrode.
• To explore the potential of laser scribing for creating flexible and non-flat electronic memory devices.
• To assess the viability of LSG-based ReRAM for practical, cost-effective electronic systems.

Main Methods:

• Utilized a one-step laser scribing technology for transfer-free rGO synthesis on flexible substrates.
• Fabricated Ag/HfOx/LSG ReRAM devices.
• Investigated the electrical characteristics of the fabricated ReRAM devices.

Main Results:

• Demonstrated a forming-free resistive switching behavior in the LSG-based ReRAM.
• Achieved stable switching characteristics and reasonable reliability performance.
• Showcased the potential for 2-bit storage per memory cell, indicating high data storage capability.

Conclusions:

• Laser-scribed rGO technology enables the cost-effective and time-efficient fabrication of ReRAM devices.
• The transfer-free and flexible nature of LSG is advantageous for fabricating complex electronic systems.
• This approach significantly broadens the application scope of rGO-based flexible electronics.